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| SPECIFICATIONS | |
| Brand | Samsung |
| Series | Solid State Disks |
| Model | MZ-V9S1T0BW |
| Interface | PCIe 4.0 x4 / 5.0 x2 NVMe 2.0 |
| Capacity | 1TB |
| Controller | Samsung in-house Controller |
| NAND Flash Memory | Samsung V-NAND TLC |
| Cache Memory | HMB (Host Memory Buffer) |
| Dimension | Max 80.15 x Max 22.15 x Max 2.38 (mm) |
| Form Factor | M.2 (2280) |
| Sequential Read | 7,150MB/s |
| Sequential Write | 6,300MB/s |
| Random Read | 850K IOPS |
| Random Write | 1,350K IOPS |
| Power Consumption | |
| Read (Active) | 4.3W |
| Write (Active) | 4.2W |
| Idle PS3 | 60mW |
| Idle PS4 | 5 mW |
| Operating Temp. | 0°C to 70°C (Measured by S.M.A.R.T. Temperature; Proper airflow recommended) |
| Non-Operating Temp. | -40°C to 85°C |
| Humidity | 5% to 95% non-condensing |
| Shock (Non-Operating) | 1,500G(Gravity), duration: 0.5ms, 3 axis |
| Vibration (Non-Operating) | 20~2,000Hz, 20G |
| MTBF | 1.5 million hours |
| Warranty Information | |
| Warranty | 51 Month Warranty Or 600TBW |
| Manufacturer's Site | Visit the manufacturer's website |
|---|---|
| Product Link | Visit the manufacturer's page for this product |
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