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Features 
Product Description
Additional Information
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| SPECIFICATIONS | |
| Brand | Samsung |
| Series | 990 EVO |
| Model | MZ-V9E2T0BW |
| Storage | |
| Drive Capacity | 2TB |
| Cache Memory | HMB(Host Memory Buffer) |
| Storage Memory | Samsung V-NAND TLC |
| Controller | Samsung In-house Controller |
| Performance | |
| Interface | PCIe 4.0 x4 / PCIe 5.0 x2 |
| NVMe 2.0 | |
| Random Read Speed (4KB, QD32) | Up to 700,000 IOPS |
| Random Write Speed (4KB, QD32) | Up to 800,000 IOPS |
| Random Read Speed (4KB, QD1) | Up to 20,000 IOPS |
| Random Write Speed (4KB, QD1) | Up to 90,000 IOPS |
| Sequential Read Speed | 5000 MB/s |
| Sequential Write Speed | 4200 MB/s |
| Physical | |
| Drive Type | SSD |
| Form Factor | M.2 2280 |
| SSD Specs | |
| GC (Garbage Collection) | Auto Garbage Collection Algorithm |
| Encryption Support | AES 256-bit Encryption (Class 0) |
| TCG/Opal IEEE1667 (Encrypted drive) | |
| Device Sleep Mode Support | Yes |
| SMART Support | Yes |
| TRIM Support | Yes |
| Reliability | |
| Endurance (Total Bytes Written) | 1200 TBW |
| Mean Time Between Failures (MTBF) | 1.5 Million Hours |
| Electrical | |
| Power Draw | Read: 5.5 W |
| Write: 4.7 W | |
| Idle: 60 mW | |
| Sleep: 5 mW | |
| Allowable Voltage | 3.3 V ± 5 % Allowable Voltage |
| Environmental | |
| Operating Shock | 1,500 G & 0.5 ms (Half sine) |
| Operating Temperature | 0 to 70°C |
| General | |
| Features | Evolved Power Efficiency |
| Exceptional Endurance | |
| Unparalleled Reliability | |
| Dynamic Thermal Guard | |
| Samsung Magician Support | |
| AES 256-Bit Encryption | |
| Samsung V-NAND TLC Flash | |
| SMART & TRIM Support | |
| Auto Garbage Collection Algorithm | |
| Dimensions (W x H x D) | 80.2 x 22 x 2.38 mm |
| Warranty Information | |
| Warranty | 5 Year Warranty or 1,200TBW |
| Manufacturer's Site | Visit the manufacturer's website |
|---|---|
| Product Link | Visit the manufacturer's page for this product |
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